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application/pdfIEEEIEEE Solid-State Circuits Letters;2021;4; ;10.1109/LSSC.2021.3123866Charge injectioncryogenic memorydata retention timegain cell embedded DRAM (GC-eDRAM)quantum computingCryoMem: A 4–300-K 1.3-GHz Hybrid 2T-Gain-Cell-Based eDRAM Macro in 28-nm Logic Process for Cryogenic ApplicationsRakshith SaligramSuman DattaArijit Raychowdhury
IEEE Solid-State Circuits Letters194 2021410.1109/LSSC.2021.3123866197
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